High‐Performance Polymers Sandwiched with Chemical Vapor Deposited Hexagonal Boron Nitrides as Scalable High‐Temperature Dielectric Materials
نویسندگان
چکیده
منابع مشابه
Tunneling characteristics in chemical vapor deposited graphene – hexagonal boron nitride – graphene junctions
Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene – hexagonal boron nitride – graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene – hexagonal boron nitride – graphene devices. Density-of-states features are observed in the tunnel...
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ژورنال
عنوان ژورنال: Advanced Materials
سال: 2017
ISSN: 0935-9648,1521-4095
DOI: 10.1002/adma.201701864